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| hexfet ? power mosfet www.irf.com 1 s d g sot-223 auirfl024n gds gate drain source absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ features ? advanced planar technology ? low on-resistance ? dynamic dv/dt rating ? 150c operating temperature ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on- resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. parameter units i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation (pcb mount) p d @t a = 25c power dissipation (pcb mount) linear derating factor (pcb mount) mw/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient (pcb mount, steady state) 90 120 c/w r ja junction-to-ambient (pcb mount, steady state) 50 60 w c 2.1 0.1 214 2.8 max. 4.0 2.3 11.2 2.8 -55 to + 150 1.0 8.3 20 5.0 v (br)dss 55v r ds(on) max. 75m i d 2.8a auirfl024n 2 www.irf.com ! " #$ ! % &! ' ( ) *(+ , ) *-.+ / ) *0!1 2 ) * + 3 ) !4! % 5 ' i sd !4+ **46+ ( ( + , *-. ! 7 86 # # 9! : $ $ 5 ;0 $ #$ &$$! : $ $ # < #$ $+ &$ #$ $ $ = # ! static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v . 0.0 .0 .0 .0 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 18.3 q gs gate-to-source charge ??? ??? 3.0 nc q gd gate-to-drain ("miller") charge ??? ??? 7.7 t d(on) turn-on delay time ??? 8.1 ??? t r rise time ??? 13.4 ??? ns t d(off) turn-off delay time ??? 22.2 ??? t f fall time ??? 17.7 ??? c iss input capacitance ??? 400 ??? c oss output capacitance ??? 145 ??? pf c rss reverse transfer capacitance ??? 60 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 2.8 (body diode) a i sm pulsed source current ??? ??? 11.2 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 35 53 ns q rr reverse recovery charge ??? 50 75 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) t j = 25c, i f = 1.68a conditions i d = 1.68a r g = 24 , 1., 0 showing the integral reverse p-n junction diode. conditions r d = 17 , . 10 di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 2.8a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 125c mosfet symbol v dd = 28v v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 v ds = 25v, i d = 1.6a i d = 1.68a v ds = 28v v gs = 20v v gs = -20v v gs = 10v, see fig. 6 and 9 auirfl024n www.irf.com 3 !"" ##$" %&!'() %* +,+- $ - !# ./ !/0/# qualification information ? sot-223 msl1 rohs compliant yes esd machine model class m2 (+/- 150v) ??? aec-q101-002 human body model class h1a (+/- 350v) ??? aec-q101-001 charged device model class c5 (+/- 2000v) ??? aec-q101-005 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level auirfl024n 4 www.irf.com fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics, fig 2. typical output characteristics, 1 10 100 4.5 5.0 5.5 6.0 6.5 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 2.8a 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v auirfl024n www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 100 200 300 400 500 600 700 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.1 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0 5 10 15 20 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.68 a v = 27v ds v = 44v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j auirfl024n 6 www.irf.com q g q gs q gd v g charge + - ( ( 1 0.1 % ( ( !>!,! d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit fig 9a. basic gate charge waveform fig 9b. gate charge test circuit fig 11. maximum effective transient thermal impedance, junction-to-ambient +,1 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) auirfl024n www.irf.com 7 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v (br)dss i as fig 12a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 10v 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.3a 2.2a 2.8a auirfl024n 8 www.irf.com $ $ %# ' note: for the most current drawing please refer to ir website at http://www.irf.com/package/ auirfl024n www.irf.com 9 ! $ $ %# ' 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4 auirfl024n 10 www.irf.com ordering information base part number package type standard pack complete part number form quantity auirfl024n sot-223 tube 95 auirfl024n tape and reel 2500 AUIRFL024NTR auirfl024n www.irf.com 11 ! " #$% & ' ( !$ ) * ! * !+ ( ( & !,& ( ! ! !+ - ( ! ! ! ! ) ! & ! ! - ) !. / - / & ) - ! 0 1 2 $ 12$ .1 1 12$ ( !/ 12$ ( / * ( ! .0'+.34565( #$%!/ ( ! 2 !!3! 4 * ! "" ##$" " ?! @!+ a $+ .&$ b0* , c %8' *;1* |
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